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Sri. Kunal Sinha

Research Interest:

Strain Engineering in Nano-scaled FETs

Teaching Experience:

8 years

Awards:

• Academic Achievement Award by Bhairab Ganguly College for outstanding performance and dedication in the academic session 2015 – 2016.
• Qualified in NIIT IT Aptitude Test in 2004, supported by the IT Department, Government of West Bengal.

Professional Membership:

IEEE, IEEE Electron Devices Society, and IEEE Nanotechnology Council (Membership number: 94857120).> <

Important Publication:

JOURNAL PUBLICATIONS

• “A technique to incorporate both tensile and compressive channel stress in Ge FinFET architecture”, Kunal Sinha, Sanatan Chattopadhyay, Partha Sarathi Gupta, Hafizur Rahaman; Journal of Computational Electronics (2017), Volume 16, Issue 3, pp 620–630, September 2017. doi: 10.1007/s10825-017-1003-x.  (impact factor:  1.526)
• “Investigating the performance of SiGe embedded dual source p-FinFET architecture”, Kunal Sinha, Partha Sarathi Gupta, Sanatan Chattopadhyay, Hafizur Rahaman; Superlattices and Microstructures, Volume 98, October 2016, Pages 37–45, doi: 10.1016/j.spmi.2016.08.004. (impact factor:  2.123)

 

CONFERENCE PUBLICATIONS

• “Investigation of Process Induced Stress in the Channel of a SiGe Embedded Source/Drain Ge-FinFET Architecture”, Kunal Sinha, Hafizur Rahaman, Sanatan Chattopadhyay; IEEE International Symposium on Devices, Circuits and Systems (ISDCS), 2018, Organized by Indian Institute of Engineering Science and Technology – Shibpur, Howrah, India and Hiroshima University, Japan.
• “Investigation of the Impact of Embedded SiGe Source/Drain Induced Uniaxial Stress on the Performance of Si p-channel 3D FinFETs”, Kunal Sinha, Hafizur Rahaman, Sanatan Chattopadhyay; 6th International Conference on Computers and Devices for Communication (CODEC), 2015, Organized by Institute of Radio Physics and Electronics, University of Calcutta, Calcutta, India.
• “Three Dimensional Process Induced Stress in Nano-scale MOSFET using Embedded Source/Drain Technology”, Kunal Sinha, International Conference on Advanced Materials and Energy Technology (ICAMET), 2014, Organized by Indian Institute of Engineering Science and Technology – Shibpur, Howrah, India and Southern University, Baton Rouge, Louisiana, USA.
• “A study on the performance of stress induced p-channel MOSFETs with embeded Si_{1− x}Ge_x source/drain”, Kunal Sinha, Hafizur Rahaman, Sanatan Chattopadhyay; 5th International Conference on Computers and Devices for Communication (CODEC), 2012, Organized by Institute of Radio Physics and Electronics, University of Calcutta, Calcutta, India.
• “Strained Silicon – A Gateway To A Faster World”, Kunal Sinha, Hafizur Rahaman, Sanatan Chattopadhyay; National Conference on Advancement in Frontier Physics: From 20th century to the Present, 2016, Organized by Bhairab Ganguly College, Belgharia, Calcutta, India.

ADDITIONAL PUBLICATIONS

• “An extremely low sub-threshold swing UTB SOI tunnel-FET structure suitable for low-power applications”, Partha Sarathi Gupta, Sayan Kanungo, Hafizur Rahaman, Kunal Sinha, Partha Sarathi Dasgupta, International Journal of Applied Physics and Mathematics, Volume 2, Issue 4, 2012, Page 240.
• “Study and analysis of the effects of SiGe source and pocket-doped channel on sensing performance of dielectrically modulated tunnel FET-based biosensors”, Sayan Kanungo, Sanatan Chattopadhyay, Partha Sarathi Gupta, Kunal Sinha, Hafizur Rahaman, IEEE Transactions on Electron Devices, Volume 63, Issue 6, 2016, Pages 2589-2596. (impact factor: 2.605)
• “An optoelectronic band-to-band tunnel transistor for near-infrared sensing applications: Device physics, modeling, and simulation”, Partha Sarathi Gupta, Hafizur Rahaman, Kunal Sinha, Sanatan Chattopadhyay, Journal of Applied Physics, Volume 120, Issue 8, 2016, Pages 084510. (impact factor: 2.068)
• “A Device Simulation based Investigation on Dielectrically Modulated Fringing Field Effect Transistor for Biosensing Applications”, Sayan Kanungo, Sanatan Chattopadhyay, Kunal Sinha, Partha Sarathi Gupta, Hafizur Rahaman, IEEE Sensors Journal, Volume 17, Issue 5, 2017, Pages 1399-1406. (impact factor: 2.512)
• “A Study on the Performance of Strained Channel Dual Source Field Effect Transistor for Bio-Sensing Application”, Kunal Sinha, Sanatan Chattopadhyay, Hafizur Rahaman, Two Days National Conference on Advances in Interdisciplinary Sciences, 2017, Bhairab Ganguly College, Belgharia, Calcutta, India.

Workshops Attended:

1. Two week ISTE Workshop on “Analog Electronics”, conducted by Indian Institute of Technology Kharagpur, from 4^th to 14^th June, 2013. This workshop was held under the National Mission on Education through ICT [MHRD] 
2. Three [3] Days Workshop on “Emerging and Post CMOS Technologies”, Sponsored by TEQUIP II, Organized by Department of Information Technology, Indian Institute of Engineering Science and Technology – Shibpur, held on June 16 – 18, 2014.    
3. Participated in the course “Charge and Spin Based Electronics: From Devices to Circuits and Systems”, Organized by Indian Institute of Engineering Science and Technology – Shibpur and Ministry of Human Resource Development, Government of India under Global Initiative of Academic Networks (GIAN) from June 13 to June 24, 2016.
4.  Two-Days Workshop on “The Modelling, Fabrication and Characterization of Bio-electronic Devices, Circuits and Systems”, Organized by Centre of Excellence in Systems Biology and Bio-Medical Engineering, University of Calcutta, A TEQUIP-II Program, held on 30^th – 31^st August, 2016.

Research Projects:

Special Achievements:

Contacts:

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